DocumentCode :
2598125
Title :
Thermal conductivity measurements of thin-film silicon dioxide
Author :
Schafft, Harry A. ; Suehle, John S. ; Mirel, Paul G A
Author_Institution :
Nat. Int. of Stand. & Technol., Gaithersburg, MD, USA
fYear :
1989
fDate :
13-14 March 1989
Firstpage :
121
Lastpage :
125
Abstract :
Measurements of the thermal conductivity of micrometer-thick films of silicon dioxide are reported for the first time. Results show that the thermal conductivity is much lower than the values reported for bulk specimens, decreases with increasing temperature, and decreases with decreasing film thickness. This means that heating effects may be much larger than expected in accelerated stress tests and in other cases where joule heating can be a concern.
Keywords :
insulating thin films; semiconductor technology; silicon compounds; thermal conductivity of solids; SiO2 thin films; accelerated stress tests; film thickness; heating effects; joule heating; micrometer-thick films; thermal conductivity; Conductive films; Conductivity measurement; Heating; Life estimation; Semiconductor films; Semiconductor thin films; Silicon compounds; Temperature; Thermal conductivity; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 1989. ICMTS 1989. Proceedings of the 1989 International Conference on
Print_ISBN :
0-87942-714-0
Type :
conf
DOI :
10.1109/ICMTS.1989.39295
Filename :
39295
Link To Document :
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