Title :
A new pinched-off cold-FET method to extract parasitic capacitances of MESFETs and HEMTs
Author :
Lai, Yeong-Lin ; Hsu, Kuo-Hua
Author_Institution :
Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan
Abstract :
The extrinsic gate and drain capacitances, Cpg and C pd, are extracted based on a physically meaningful depletion-layer model and a linear regression technique. The extraction method can be applied to obtain the small-signal equivalent circuit parameters for the MESFETs and HEMTs. The simulated S parameters based on the new analytical method exhibit great agreement with the measured S parameters from 0.5 to 20 GHz
Keywords :
S-parameters; Schottky gate field effect transistors; capacitance; equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; statistical analysis; 0.5 to 20 GHz; HEMTs; MESFETs; extraction method; extrinsic drain capacitances; extrinsic gate capacitances; linear regression technique; measured S parameters; parasitic capacitances; physically meaningful depletion-layer model; pinched-off cold-FET method; simulated S parameters; small-signal equivalent circuit parameters; Capacitors; Equivalent circuits; FETs; Geometry; HEMTs; Inductance; MESFET circuits; Parasitic capacitance; Scattering parameters; Solid modeling;
Conference_Titel :
Radio and Wireless Conference, 2000. RAWCON 2000. 2000 IEEE
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-6267-5
DOI :
10.1109/RAWCON.2000.881879
