0.24-um CMOS technology for Bluetooth power applications

Author

Chen, E. ; Heo, D. ; Hamai, M. ; Laskar, J. ; Bien, D.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2000

fDate

2000

Firstpage

163

Lastpage

166

Abstract

This paper reports the experimental evaluation of a 0.24-um CMOS technology for the implementation of Bluetooth power amplifiers. From load-pull measurement, a 0.24-um NMOSFET of 2,000-um gate width can deliver 23-dBm output power with 45% drain efficiency for 2.5 V operation at 2.4 GHz. The cut-off frequency f_T and maximum oscillation frequency f_max are 25 GHz and 11 GHz, respectively. The measured drain-source breakdown voltage V_dso is 5 4 V. The maximum output power requirement of Bluetooth transmitters can be achieved by the 0.24-um CMOS power transistor

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; power integrated circuits; 0.24 micron; 2.4 GHz; 2.5 V; 45 percent; Bluetooth power amplifier; CMOS power transistor; NMOSFET; cut-off frequency; drain efficiency; drain-source breakdown voltage; load-pull measurement; maximum oscillation frequency; output power; transmitter; Bluetooth; CMOS technology; Cutoff frequency; MOSFET circuits; Power amplifiers; Power generation; Power measurement; Power transistors; Transmitters; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 2000. RAWCON 2000. 2000 IEEE

Conference_Location

Denver, CO

Print_ISBN

0-7803-6267-5

Type

conf

DOI

10.1109/RAWCON.2000.881880

Filename

881880