Measurement of misalignment using a triangular MOS transistor

Author

Lozano, M. ; Cané, C. ; Cabruja, E. ; Gràcia, I. ; Lora-Tamayo, E. ; Serra-Mestres, F.

Author_Institution

Univ. Autonoma de Barcelona, Spain

fYear

1989

fDate

13-14 March 1989

Firstpage

139

Lastpage

142

Abstract

A new device based on current measurements for misalignment determination is presented. The theoretical study and experimental results demonstrate that the obtained values are independent of the bias. A simple setup, using only an HP-4145B or similar measuring device, is enough for the complete Delta x and Delta y determination. Two structures with different geometries were designed. A batch of wafers was processed, and the results of the measurements show that the misalignment obtained is independent on the geometry. Several advantages with respect to the classic resistive structures are pointed out.

Keywords

electric current measurement; insulated gate field effect transistors; integrated circuit technology; position measurement; HP-4145B; current measurements; misalignment determination; resistive structures; triangular MOS transistor; wafer batch; Area measurement; Current measurement; Electric variables measurement; Equations; MOSFETs; Measurement units; Microelectronics; Resistors; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1989. ICMTS 1989. Proceedings of the 1989 International Conference on

Print_ISBN

0-87942-714-0

Type

conf

DOI

10.1109/ICMTS.1989.39298

Filename

39298