Three-dimensional modeling of AlGaN/GaN HEMT including electro-thermal coupling effects

Author

Wang, Jianhui ; Wang, Xinhua ; Pang, Lei ; Chen, Xiaojuan ; Kong, Xin ; Liu, Xinyu

Author_Institution

Microwave Devices & Integrated Circuits Dept., Inst. of Microelectron., Beijing, China

fYear

2012

fDate

19-20 April 2012

Firstpage

1

Lastpage

4

Abstract

Thermal performance of AlGaN/GaN HEMT is a critical issue during the design stage, since it significantly affect the lifetime of the device. This paper introduces a three-dimensional modeling technique including electro-thermal coupling effects for investing the thermal characteristic of the AlGaN/GaN HEMT. The method achieves a good balance between simulation time and accuracy through iterative calculation between the 2D and 3D model.

Keywords

III-V semiconductors; electronic engineering computing; gallium compounds; high electron mobility transistors; iterative methods; semiconductor device models; solid modelling; thermal analysis; wide band gap semiconductors; 2D model; 3D model; AlGaN-GaN; HEMT; design stage; device lifetime; electro-thermal coupling effect; iterative calculation; thermal characteristic; thermal performance; three-dimensional modeling; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Silicon carbide; Solid modeling; Temperature measurement; AlGaN/GaN; High-electron mobility transistor; Self-heating; Thermal boundary resistance; Thermal characterization; Thermal modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2012 International Workshop on

Conference_Location

Chengdu

Print_ISBN

978-1-4673-1893-8

Type

conf

DOI

10.1109/MMWCST.2012.6238127

Filename

6238127