• DocumentCode
    2598379
  • Title

    Failure Modes and Mechanisms in Solid Tantalum Capacitors

  • Author

    Fresia, E.J. ; Eckfeldt, J.M.

  • Author_Institution
    Sprague Electric Company, Engineering Laboratories, North Adams, Massachusetts
  • fYear
    1963
  • fDate
    Sept. 1963
  • Firstpage
    483
  • Lastpage
    497
  • Abstract
    Both the catastrophic and leakage current increase failure modes are directly associated with the current flickering phenomenon peculiar to the solid tantalum capacitor. These current bursts are themselves associated with imperfections in the tantalum oxide film. Imperfections or flaws can arise from several sources such as impurities (both metallic and gaseous) in the base metal, surface geometry of the metal, physical damage to the oxide, or thermal cycling of the metaloxide during processing. Localized heating within microscopic flaws due to relatively high current flowing through such sites can account for leakage current rises and also subsequent flickers assuming an energy barrier has been exceeded which allows a sudden avalanche flow of current to occur. Surges which occur with no apparent gradual leakage current increase are difficult to explain, but one can consider such possibilities as slow chemical reactions at extremely small areas or field-induced diffusion of ions and/or vacancies in the oxide. Occurrence of either failure mode can be reduced or eliminated by various combinations of applied voltage, environmental temperature, or circuit resistance. Infrequently failures due to increases in capacitance and/or dissipation factor are found. A defective hermetic seal which allows moisture to enter the unit is the most common cause for such failures. Since more of the available tantalum oxide surface is contacted by the moisture than is by the MnO2, the capacitance shows an increase. The increase in dissipation factor results from an increase in the resistivity of the MNO2 due to the presence of moisture.
  • Keywords
    Capacitance; Capacitors; Energy barrier; Geometry; Heating; Impurities; Leakage current; Microscopy; Moisture; Solids;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics of Failure in Electronics, 1963. Second Annual Symposium on the
  • Conference_Location
    Chicago, IL, USA
  • ISSN
    0097-2088
  • Type

    conf

  • DOI
    10.1109/IRPS.1963.362263
  • Filename
    4207614