DocumentCode :
2598446
Title :
Important Mechanism Contributing to Tunnel Diode Failure
Author :
Nanavati, R.P.
Author_Institution :
Syracuse University, Syracuse, New York
fYear :
1963
fDate :
Sept. 1963
Firstpage :
550
Lastpage :
559
Keywords :
Gallium arsenide; Nitrogen; Photonic crystals; Radiation detectors; Semiconductor diodes; Silicon radiation detectors; Temperature; Testing; Threshold voltage; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics of Failure in Electronics, 1963. Second Annual Symposium on the
Conference_Location :
Chicago, IL, USA
ISSN :
0097-2088
Type :
conf
DOI :
10.1109/IRPS.1963.362267
Filename :
4207618
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2598446
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