DocumentCode
2598528
Title
Drain and bulk symmetry factor: a statistical tool to improve device reliability
Author
Dars, P. ; D´Ouville, T. Ternisien ; Merckel, G. ; Mingam, H.
Author_Institution
CNET-CNS, Meylan, France
fYear
1989
fDate
13-14 March 1989
Firstpage
261
Lastpage
265
Abstract
The drain and bulk symmetry factor is proposed to evaluate device sensitivity to asymmetrical characteristics resulting from process parameters. With the use of a simple test structure and a few specific measurements, it allows comparison of the effects of different processes and provides a good predictive tool in terms of aging behavior. It also shows that it is necessary to do a statistical analysis to compare the influences of various processes.
Keywords
ageing; insulated gate field effect transistors; reliability; semiconductor device testing; statistical analysis; NMOS transistors; aging behavior; asymmetrical characteristics; bulk symmetry factor; device reliability; drain symmetry factor; statistical analysis; statistical tool; test structure; Automatic testing; Current measurement; Electrostatic measurements; Microelectronics; Performance evaluation; Semiconductor device measurement; Shadow mapping; Statistical analysis; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1989. ICMTS 1989. Proceedings of the 1989 International Conference on
Print_ISBN
0-87942-714-0
Type
conf
DOI
10.1109/ICMTS.1989.39320
Filename
39320
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