Misaligned (or twist) wafer-bonding: a new technology for making III-V compliant substrates

We show from theoretical calculations and modeling that intentionally misaligned (or twist) wafer-bonding can be used to increase the critical thickness of a III-V thin film by several orders of magnitude. In conventional III-V wafer-bonding for optoelectronics, the facets of two single crystal wafers are aligned with each other before bonding in order to facilitate wafer-cleaving and further device-processing. To the author´s knowledge, the peculiar case of intentional misalignment between two bonded wafers´ facets has not been reported for III-V single crystal wafers. We propose and model a new type of substrate (hereafter known as a compliant substrate) platform to be used for lattice-mismatched dislocation-free heteroepitaxial growth. In forming the compliant substrate, a thin-film (~100 Å) of a certain III-V compound is bonded to a bulk substrate of the same material, with a small angle placed between their [011] facets. The misalignment allows the film to relax via a network of screw dislocations in the twist-boundary