Wafer bonded all-optical switching devices

Author

Oudar, J.L. ; Raj, R. ; Jeannès, F. ; Patriarche, G. ; Lugagne-Delpon, E.

Author_Institution

France Telecom, CNET, Bagneux, France

Volume

2

fYear

1996

fDate

18-21 Nov 1996

Firstpage

354

Abstract

In conclusion wafer-bonding of GaAs on InP is an efficient method to realize vertical cavity all-optical switching devices operating at 1.55 μm wavelength. It combines very efficiently the active optoelectronic properties of InP-based materials with the advantageous optical and thermal properties of GaAs-AlAs Bragg reflectors

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical communication equipment; optical fabrication; optical switches; semiconductor switches; wafer bonding; 1.55 mum; DBR lasers; GaAs on InP; GaAs-AlAs; GaAs-AlAs Bragg reflectors; GaAs-InP; InP; InP-based materials; VCSEL; active optoelectronic properties; optical properties; semiconductor lasers; thermal properties; vertical cavity all-optical switching devices; wafer bonded all-optical switching devices; wafer-bonding; Gallium arsenide; Indium phosphide; Mirrors; Optical bistability; Optical coupling; Optical fiber networks; Optical fibers; Optical switches; Vertical cavity surface emitting lasers; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571919

Filename

571919