Title :
A broadband automatic gain control amplifier for the Square Kilometer Array
Author :
Wu, Ge ; Belostotski, Leonid ; Haslett, James W.
Author_Institution :
Schulich Sch. of Eng., Univ. of Calgary, Calgary, AB, Canada
Abstract :
In this paper, a low-power broadband automatic-gain-control (AGC) amplifier targeted for use in the Square Kilometer Array (SKA) is presented. The AGC is composed of an input power-match circuit, a linear-in-dB output variable gain amplifier (VGA), a power detector (PD), an error amplifier, a comparator and a loop filter. The input stage is power matched to 100 Ω differential source impedance, achieves an input reflection coefficient of less than -15.6 dB and maximum noise figure of 2.6 dB from 0.5 GHz to 2.0 GHz. The VGA has a variable gain range of 29 dB and -3 dB bandwidth of 4 GHz. The square-law relationship between output current and gate-source voltage characteristics of a MOS transistor working in the strong inversion region is used for power detection. The -3 dB bandwidth of the AGC amplifier is 2.65 GHz with and 3.6 GHz without the power-match circuit. The input operating range of the AGC is from -50 dBm to -20 dBm. The design is based on a commercial 65 nm CMOS technology with a 1 V power supply. The total power consumption of the AGC is 6 mW of which 4.5 mW is consumed by the input-match circuit which is not needed when the AGC is integrated in the SKA receiver.
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; automatic gain control; differential amplifiers; radio receivers; radiotelescopes; CMOS technology; MOS transistor; SKA receiver; bandwidth 2.65 GHz; bandwidth 3.65 GHz; bandwidth 4 GHz; differential source impedance; frequency 0.5 GHz to 2 GHz; gate source voltage characteristic; input reflection coefficient; low power broadband automatic gain control amplifier; power 6 mW; size 65 nm; square kilometer array; variable gain amplifier; voltage 1 V; Bandwidth; CMOS integrated circuits; CMOS technology; Detectors; Impedance matching; Power demand; Transistors;
Conference_Titel :
NEWCAS Conference (NEWCAS), 2010 8th IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-6806-5
Electronic_ISBN :
978-1-4244-6804-1
DOI :
10.1109/NEWCAS.2010.5603741