Design of a subharmonic mixer with plannar Schottky diodes at 300–350 GHz

Author

Chen, Zhe ; Zhang, Bo ; Fan, Yong ; Yang, Xiaofan ; Cheng, Fei

Author_Institution

Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2012

fDate

19-20 April 2012

Firstpage

1

Lastpage

3

Abstract

The paper presents the design and simulation investigation of a low-loss fixed-tuned subharmonically pumped mixer at 300-350GHz, utilizing GaAs Schottky planar diodes. The antiparallel diodes pair is from Rutherford Appleton Laboratory (RAL), flip-chip mounted on a 50μm-thick suspended quartz substrate. The simulation performance of the mixer exhibits a conversion loss below 10 dB over the range from 302GHz to 350GHz, with 3 mW of local oscillator (LO) power.

Keywords

III-V semiconductors; Schottky diode mixers; flip-chip devices; gallium arsenide; microwave mixers; oscillators; quartz; GaAs; LO power; RAL; Rutherford Appleton Laboratory; Schottky planar diode; antiparallel diodes pair; conversion loss; flip-chip; frequency 300 GHz to 350 GHz; local oscillator; low-loss fixed-tuned subharmonically pumped mixer; power 3 mW; quartz substrate; size 50 mum; Electromagnetic waveguides; Local oscillators; Microwave theory and techniques; Mixers; Radio frequency; Receivers; Schottky diodes; Schottky diodes; Terahertz; sub-harmonic mixer;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2012 International Workshop on

Conference_Location

Chengdu

Print_ISBN

978-1-4673-1893-8

Type

conf

DOI

10.1109/MMWCST.2012.6238141

Filename

6238141