Title :
Low loss cryogenic InAs/AlSb HEMT non-reflective SP4T switch
Author :
Ma, B.Y. ; Bergman, J.I. ; Hacker, J.B. ; Sullivan, G.J. ; Sailer, A.L. ; Brar, B.
Author_Institution :
Teledyne Scientific and Imaging, Thousand Oaks, United States
Abstract :
Summary form only given, as follows. A non-reflective single pole four throw (SP4T) MMIC switch using ABCS InAs/AlSb HEMT process technology, designed for cryogenic temperature has been fabricated and characterized. This switch is suitable for low RF power applications that require very low insertion loss and good isolation. At 2 GHz, the SP4T switch demonstrated 0.52dB insertion loss and 33dB isolation at room temperature. At 90K, the switch has seen 0.2dB and 2dB improvement in insertion loss and isolation.
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5973547
