DocumentCode
2598792
Title
X-Band +24 dBm CMOS power amplifier with transformer power combining
Author
Comeau, Jonathan P. ; Thoenes, Edward W. ; Imhoff, Ashley ; Morton, Matthew A.
Author_Institution
Raytheon Co., Andover, MA, USA
fYear
2011
fDate
17-19 Jan. 2011
Firstpage
49
Lastpage
52
Abstract
A monolithic 10 GHz CMOS power amplifier has been demonstrated in a 0.18 μm commercially available CMOS process. The design utilizes on-chip transformer based power combining to achieve a saturated output power of 24.5 dBm at 10 GHz, with a power added efficiency of 18%. The circuit has a small signal gain of 25 dB, with a 3 dB bandwidth from 8.6 to 10.3 GHz. The circuit operates off of a 3.0V supply and can deliver >; 21 dBm of power over an 8 - 11 GHz bandwidth.
Keywords
CMOS integrated circuits; MMIC power amplifiers; X-band CMOS power amplifier; frequency 8 GHz to 11 GHz; on-chip transformer; power added efficiency; saturated output power; size 0.18 mum; transformer power combining; voltage 3 V; CMOS integrated circuits; Circuit faults; Gain; Integrated circuit modeling; Power amplifiers; Power generation; System-on-a-chip; CMOS; power amplifier; power combining; transformer;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on
Conference_Location
Phoenix, AZ
Print_ISBN
978-1-4244-8060-9
Type
conf
DOI
10.1109/SIRF.2011.5719306
Filename
5719306
Link To Document