Correlation between electrical properties degradation and short-channel effects in Nano-gate AlGaN/GaN HEMTs

Author

Du, Jiangfeng ; Zhang, Xinchuan ; Feng, Zhihong ; Dun, Shaobo ; Zhao, Ziqi ; Yin, Jianglong ; Ma, Kunhua ; Pu, Yan

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2012

fDate

19-20 April 2012

Firstpage

1

Lastpage

4

Abstract

Based on the analysis of short-channel effects and device modeling of Nano-gate AlGaN/GaN high-electron mobility transistors (HEMTs), the key device characteristics of gate-length from 500 down to 50nm have been studied by numerical simulations. And the relationship between aspect ratio (the ratio of gate-length and the thickness of barrier layer) and the degeneration of these parameters is discussed in detail. The results show that the simulated electrical characteristics are in good agreement with reported experimental data.

Keywords

III-V semiconductors; aluminium compounds; electric properties; gallium compounds; high electron mobility transistors; nanoelectronics; numerical analysis; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; barrier layer; device modeling; electrical characteristics; electrical properties degradation; gate-length; high-electron mobility transistor; nano-gate HEMT; numerical simulation; short-channel effect; size 50 nm to 500 nm; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Threshold voltage; Transconductance; AlGaN/GaN HEMT; aspect ratio; nano-gate; short-channel effects; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2012 International Workshop on

Conference_Location

Chengdu

Print_ISBN

978-1-4673-1893-8

Type

conf

DOI

10.1109/MMWCST.2012.6238156

Filename

6238156