Title :
On-chip artificial transmission lines, enabling compact Si-based mmWave ICs
Author :
Trivedi, Vishal P. ; To, Kun-Hin ; Huang, W. Margaret
Author_Institution :
Freescale Semicond. Inc., Tempe, AZ, USA
Abstract :
On-chip integration of artificial (slow-wave) transmission lines (ATL) formed by periodic loading of microstrip lines with MIM capacitors is demonstrated, for the first time, using 0.18μm SiGe:C BiCMOS. We demonstrate 2× length-reduction of λ/4-stub RF choke and filters at 38GHz and at 77GHz. Due to the extensive use of TLs in mmWave design, ATL has more potential for enabling compact mmWave design than technology scaling. A simplified theory is also presented to design mmWave ATLs. Finally, BEOL-based metal-on-metal (MOM) capacitor instead of MIM capacitor is proposed for ATL improvement based on RF characterization of 65nm CMOS.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; capacitors; elemental semiconductors; field effect MIMIC; microstrip lines; silicon; transmission lines; BiCMOS integrated circuit; MIM capacitors; MOM capacitor; Si; SiGe:C; metal-on-metal capacitor; microstrip lines; mmWave integrated circuit; on-chip artificial transmission lines; on-chip integration; size 0.18 mum; size 65 nm; slow wave transmission lines; Capacitance; Capacitors; Inductors; MIM capacitors; Moment methods; Radio frequency; System-on-a-chip; CMOS; artificial transmission line; mm-wave; slow-wave; transmission line;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-8060-9
DOI :
10.1109/SIRF.2011.5719313
