DocumentCode :
2598984
Title :
Design and optimization of a low-noise cross-coupled fundamental VCO in 90nm CMOS for 60GHz applications
Author :
Katz, Alex ; Degani, Ofir ; Socher, Eran
Author_Institution :
Mobile Wireless Div., Intel Corp., Haifa, Israel
fYear :
2011
fDate :
17-19 Jan. 2011
Firstpage :
13
Lastpage :
16
Abstract :
A methodology for the design and optimization of a low noise cross-coupled fundamental VCO for 60 GHz applications is presented in this paper. Using a parametric study, semi-empirical relations are derived for the oscillator elements, enabling optimization for phase noise, tuning range and power, The designed VCO is implemented in 90 nm standard CMOS technology, offers a frequency tuning range of 2.5 GHz around 58.7 GHz using a combination of analog control of AMOS varactors and a four-bit digital control bus of differential switched capacitance cells. The VCO yields a measured phase noise of -100 dBc/Hz at 1 MHz offset consuming 20 mW and -106 dBc/Hz consuming 55 mW.
Keywords :
CMOS integrated circuits; circuit optimisation; integrated circuit design; phase noise; voltage-controlled oscillators; AMOS varactors; CMOS; cross coupled fundamental VCO; design and optimization; differential switched capacitance cells; four-bit digital control bus; frequency 60 GHz; low noise; phase noise; power 55 mW; semi empirical relations; size 90 nm; tuning range; CMOS integrated circuits; CMOS technology; Inductors; Phase noise; Tuning; Voltage-controlled oscillators; CMOS; accumulated-mode MOS (AMOS); phase noise; voltage-controlled oscillators (VCO);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-8060-9
Type :
conf
DOI :
10.1109/SIRF.2011.5719316
Filename :
5719316
Link To Document :
بازگشت