An engineering approach to model current induced by SE for deep sub-micron technology

Author

Zhou, Wanting ; Li, Lei ; Zhou, Lu

Author_Institution

Res. Inst. of Electron. Sci. & Technol., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2012

fDate

19-20 April 2012

Firstpage

1

Lastpage

3

Abstract

This paper presents an engineering approach to model photocurrent induced by single event striking on bulk CMOS for deep sub-micron process technology. The photocurrent generated by 1D carrier transport equations is instead of ideal double exponential current model within bias-dependent single-event compact model to analyze the behavior of bulk CMOS being striking. Firstly, the approach using a 1D photocurrent equation to emulate the current curve verses the LET is explained in section II. Then a stand bipolar SPICE model with injection photocurrent is modeled by bipolar affects analysis. This work proposes an improved current injected model.

Keywords

CMOS integrated circuits; SPICE; photoconductivity; photoemission; 1D carrier transport equation; 1D photocurrent equation; bias-dependent single-event compact model; bipolar affects analysis; bulk CMOS; deep submicron process technology; engineering approach; injection photocurrent modeling; photocurrent generation; single event striking; stand bipolar SPICE model; Analytical models; CMOS integrated circuits; CMOS technology; Mathematical model; Photoconductivity; SPICE; Semiconductor device modeling; CMOS; SEE; SPICE; bipolar; photocurrent;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2012 International Workshop on

Conference_Location

Chengdu

Print_ISBN

978-1-4673-1893-8

Type

conf

DOI

10.1109/MMWCST.2012.6238161

Filename

6238161