Title :
An engineering approach to model current induced by SE for deep sub-micron technology
Author :
Zhou, Wanting ; Li, Lei ; Zhou, Lu
Author_Institution :
Res. Inst. of Electron. Sci. & Technol., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
This paper presents an engineering approach to model photocurrent induced by single event striking on bulk CMOS for deep sub-micron process technology. The photocurrent generated by 1D carrier transport equations is instead of ideal double exponential current model within bias-dependent single-event compact model to analyze the behavior of bulk CMOS being striking. Firstly, the approach using a 1D photocurrent equation to emulate the current curve verses the LET is explained in section II. Then a stand bipolar SPICE model with injection photocurrent is modeled by bipolar affects analysis. This work proposes an improved current injected model.
Keywords :
CMOS integrated circuits; SPICE; photoconductivity; photoemission; 1D carrier transport equation; 1D photocurrent equation; bias-dependent single-event compact model; bipolar affects analysis; bulk CMOS; deep submicron process technology; engineering approach; injection photocurrent modeling; photocurrent generation; single event striking; stand bipolar SPICE model; Analytical models; CMOS integrated circuits; CMOS technology; Mathematical model; Photoconductivity; SPICE; Semiconductor device modeling; CMOS; SEE; SPICE; bipolar; photocurrent;
Conference_Titel :
Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2012 International Workshop on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4673-1893-8
DOI :
10.1109/MMWCST.2012.6238161
