CMOS integrated digital RF MEMS capacitors

Author

Natarajan, Saravana P. ; Cunningham, Shawn J. ; Morris, Arthur S., III ; Dereus, Dana R.

Author_Institution

wiSpry Inc., Irvine, CA, USA

fYear

2011

fDate

17-19 Jan. 2011

Firstpage

173

Lastpage

176

Abstract

A zero-level packaged, digitally switched, RF MEMS capacitor array has been developed within a mass production capable HV RF CMOS process. These RF MEMS capacitors are grouped in flip-chip cells that exhibit a high quality factor of 87 at 2 GHz, a tuning ratio of almost 10 to 1, a self resonant frequency greater than 5 GHz, and operate using a 3.3 V supply voltage. These arrays are ideally suited for front-end tuning applications in portable wireless devices such as cell phones.

Keywords

CMOS integrated circuits; Q-factor; capacitors; charge pump circuits; flip-chip devices; mass production; micromechanical devices; mobile handsets; tuning; RF CMOS process; cell phones; digital RF MEMS capacitors; flip-chip cells; frequency 2 GHz; front-end tuning; integrated charge pump; mass production; quality factor; tuning ratio; voltage 3.3 V; CMOS integrated circuits; Capacitance; Capacitors; Metals; Micromechanical devices; Radio frequency; Tuning; MEMS; MEMS capacitors; MEMS tuners; RF CMOS; mobile phone tuners; variable capacitors;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-8060-9

Type

conf

DOI

10.1109/SIRF.2011.5719327

Filename

5719327