• DocumentCode
    2599229
  • Title

    Innovative 8-shaped inductors integrated in an advanced BiCMOS technology

  • Author

    Durand, C. ; Gianesello, F. ; Gloria, D.

  • Author_Institution
    Technol. R&D, Silicon Technol. Dev., STMicroelectron., Crolles, France
  • fYear
    2011
  • fDate
    17-19 Jan. 2011
  • Firstpage
    81
  • Lastpage
    84
  • Abstract
    As integrated inductors are a key component for RF circuits, these devices are mainly highlighted because of an imposing size and disturbing radiations. This article focuses on two innovative 8-shaped inductors presenting size reduction and low radiation capability. 8-shaped devices are compared to octagonal inductors by the way of measurements and simulations. 8-shaped inductors, even if presenting slightly lower electrical performances (lower size but lower quality factor), show interesting coupling reduction, with improvements from 7 to 20 dB depending of inductor design and orientation. Future works will consist of optimizing 2/3-turn 8-shaped layouts and test designs in circuit applications.
  • Keywords
    BiCMOS integrated circuits; inductors; radiofrequency integrated circuits; 8-shaped integrated inductor; RF circuit; disturbing radiation; gain 7 dB to 20 dB; low radiation capability; lower electrical performance; octagonal inductor; size reduction; BiCMOS integrated circuits; Couplings; Inductance; Inductors; Layout; Metals; Performance evaluation; 2×8-shaped inductor; 8-shaped inductor; BiCMOS technology; electro-magnetic coupling; inductive cross talk; integrated passives;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    978-1-4244-8060-9
  • Type

    conf

  • DOI
    10.1109/SIRF.2011.5719329
  • Filename
    5719329