Title :
Accurate active device characterization for a 60GHz 65nm-CMOS Power Amplifier realization
Author :
Aloui, Sofiane ; Kerherve, Eric ; Plana, Robert ; Belot, Didier
Author_Institution :
IMS Lab., Univ. of Bordeaux, Talence, France
Abstract :
A fully integrated Power Amplifier (PA) is fabricated for the 60GHz Wireless Personal Area Network (WPAN). It is based on the 65nm CMOS technology from STMicro-electronics. The PA is matched without serial transmission lines (T-Lines) to reach good performances and low die area. S-parameters and load pull measurement results are demonstrated and compared with electromagnetic simulations for the power transistor. The PA is optimized to deliver the maximum saturated output power (Psat) under class A biasing. The PA offers a Psat of 8.2dBm, an Output Compression Point (OCP1) of 5dBm and a gain of 5.7dB. The die area is 0.29mm2 with pads.
Keywords :
CMOS integrated circuits; personal area networks; power amplifiers; CMOS power amplifier; S-parameters; STMicroelectronics; active device characterization; class A biasing; electromagnetic simulation; frequency 60 GHz; fully integrated power amplifier; load pull measurement; maximum saturated output power; output compression point; power transistor; serial transmission lines; size 65 nm; wireless personal area network; CMOS integrated circuits; CMOS technology; Coplanar waveguides; Gain; Impedance; Power transistors; Transistors;
Conference_Titel :
NEWCAS Conference (NEWCAS), 2010 8th IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-6806-5
Electronic_ISBN :
978-1-4244-6804-1
DOI :
10.1109/NEWCAS.2010.5603770
