Fractal analysis of Sn-Ag, Sn-Ag-Cu, Sn-Ag-Bi interfacial morphology in flipchip packaging applications

Author

Jayaganthan, R. ; Mohankumar, K. ; Tay, A.A.O. ; Kripesh, V.

Author_Institution

Dept. of Mech. Eng., Singapore Nat. Univ.

fYear

2004

fDate

8-10 Dec. 2004

Firstpage

620

Lastpage

624

Abstract

In the present study Sn-Ag/Au/Ni-P/Cu, Sn-Ag-Cu/Au/Ni-P/Cu, and Sn-Ag-Bi/Au/Ni-P/Cu diffusion couples were prepared by reflowing the Pb free solders on the top surface metallization of the substrate at 250degC. The diffusion couples were annealed at 150degC up to 4, 8, 16, 36, 45 days. The growth of IMCs formed among the different elements in the solder alloys was studied and their morphology were characterised by fractal dimension using SEM micrographs. The role of processing parameters on different morphological features was studied in detail. The box counting technique has been used to measure the fractal dimension of the IMCs. It has been observed that the morphology of the IMC varies from scallop to planar with increasing annealing time

Keywords

annealing; bismuth alloys; chemical interdiffusion; chip scale packaging; copper alloys; flip-chip devices; fractals; gold; integrated circuit interconnections; nickel alloys; phosphorus alloys; reflow soldering; scanning electron microscopy; silver alloys; solders; tin alloys; 150 C; 250 C; Pb free solders; SEM micrograph; Sn-Ag-Au-Ni-P-Cu; Sn-Ag-Au-Ni-P-Cu diffusion couple; Sn-Ag-Bi-Au-Ni-P-Cu; Sn-Ag-Bi-Au-Ni-P-Cu diffusion couple; Sn-Ag-Cu-Au-Ni-P-Cu; Sn-Ag-Cu-Au-Ni-P-Cu diffusion couple; box counting technique; diffusion couple annealing; flipchip packaging applications; fractal analysis; fractal dimension of measurement; interfacial morphology; solder alloys; solder reflowing; top surface metallization; Annealing; Bismuth; Copper; Electronics packaging; Fractals; Gold; Intermetallic; Morphology; Soldering; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference, 2004. EPTC 2004. Proceedings of 6th

Conference_Location

Singapore

Print_ISBN

0-7803-8821-6

Type

conf

DOI

10.1109/EPTC.2004.1396682

Filename

1396682