DocumentCode :
2599277
Title :
Reliability Phenomena in Aluminum Metalizations on Silicon Dioxide
Author :
Berger, W.M. ; Keen, R.S. ; Schnable, G.L.
Author_Institution :
Philco Corporation, Lansdale Division, Lansdale, Pennsylvania
fYear :
1965
fDate :
Nov. 1965
Firstpage :
1
Lastpage :
31
Keywords :
Aluminum; Circuit testing; Conductivity; Dielectrics; Integrated circuit reliability; Life testing; MOS devices; Silicon compounds; Temperature; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics of Failure in Electronics, 1965. Fourth Annual Symposium on the
Conference_Location :
Chicago, IL, USA
ISSN :
0097-2088
Type :
conf
DOI :
10.1109/IRPS.1965.362312
Filename :
4207669
Link To Document :
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