Title :
RF antenna switch using dynamic threshold SOI MOSFET
Author :
Emam, M. ; Raskin, J. -P ; Vanhoenacker-Janvier, D.
Author_Institution :
Electr. Eng. Dept., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
The trade-off between insertion loss and isolation in RF antenna switches is critical for RF communication systems. Possible improvement through circuit design is limited. The implementation of RF antenna switch using an optimized technology or an innovative device architecture could be the solution to achieve better insertion loss and isolation. The dynamic threshold MOSFET is presented here as one possible solution.
Keywords :
MOSFET; antenna accessories; integrated circuit design; microwave switches; radiofrequency integrated circuits; silicon-on-insulator; MOSFET; RF antenna switch; RF communication systems; SOI; dynamic threshold; insertion loss; Antennas; Insertion loss; Logic gates; Radio frequency; Switches; Switching circuits; Transistors; Dynamic Threshold; Partially-Depleted Silicon-on-Insulator technology; RF Antenna Switch;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-8060-9
DOI :
10.1109/SIRF.2011.5719333
