Title :
Dynamic stress-strength approach for reliability prediction
Author :
Masi, Maria Gabriella ; Peretto, Lorenzo ; Tinarelli, Roberto
Author_Institution :
Dept. of Electr. Eng., Univ. di Bologna, Bologna, Italy
Abstract :
The role of reliability prediction during the design stage of a system is worldwide recognized. Simulation tools and proper experimental approaches are usually applied to get reliability properties. In this paper, an experimental method relying on the use the dynamic stress-strength approach is presented and applied on a simple electronic device. The obtained results are presented and discussed.
Keywords :
bipolar transistors; semiconductor device models; semiconductor device reliability; bipolar transistor; dynamic stress-strength approach; electronic device; reliability prediction; simulation tool; Aging; Databases; Electronic equipment testing; Instrumentation and measurement; Life estimation; Life testing; Probability density function; Reliability theory; Strontium; System testing; electronic device; reliability; strenght curve;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 2009. I2MTC '09. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3352-0
DOI :
10.1109/IMTC.2009.5168632
