Title :
Elimination of Forward-Biased Second Breakdown by Resistive Ballasting of Silicon Power Transistors
Author :
Stolnitz, Daniel
Author_Institution :
Radio Corporation of America, Somerville, New Jersey
Keywords :
Charge coupled devices; DH-HEMTs; Electric breakdown; Electronic ballasts; Hydrogen; Power transistors; Silicon;
Conference_Titel :
Physics of Failure in Electronics, 1965. Fourth Annual Symposium on the
Conference_Location :
Chicago, IL, USA
DOI :
10.1109/IRPS.1965.362322
