Elimination of Forward-Biased Second Breakdown by Resistive Ballasting of Silicon Power Transistors

Author

Stolnitz, Daniel

Author_Institution

Radio Corporation of America, Somerville, New Jersey

fYear

1965

fDate

Nov. 1965

Firstpage

227

Lastpage

241

Keywords

Charge coupled devices; DH-HEMTs; Electric breakdown; Electronic ballasts; Hydrogen; Power transistors; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Failure in Electronics, 1965. Fourth Annual Symposium on the

Conference_Location

Chicago, IL, USA

ISSN

0097-2088

Type

DOI

10.1109/IRPS.1965.362322

Filename

4207679

Link To Document