• DocumentCode
    2599505
  • Title

    Reduction of impedance and feedthrough parasitics of RF micromechanical resonators

  • Author

    Dewdney, Julio ; Wu, I-Tsang ; Wei, Mian ; Wang, Jing

  • Author_Institution
    Center for Wireless & Microwave Inf. Syst., Univ. of South Florida, Tampa, FL, USA
  • fYear
    2011
  • fDate
    17-19 Jan. 2011
  • Firstpage
    165
  • Lastpage
    168
  • Abstract
    Having been demonstrated at frequencies up to 6.2 GHz with measured Q´s >; 4,000, micromechanical resonators hold great promise for enabling on-chip high-Q passives needed in wireless communication systems. However, the acceptance of such devices in present-day transceivers has been hindered by their excessive motional impedances and feedthrough parasitics that prevent direct integration with other RF subsystems and IC´s. This paper reviews strategies for alleviating these issues with focus on the employment of transducers with improved conversion efficiency enabled by atomic layer deposition (ALD) process. Additionally, arrays of mechanically-coupled resonators have been developed to enhance the overall output signal strength of the composite resonators thus lowering the effective motional impedance. Moreover, on-chip Faraday cages were employed to mitigate the effect of the feedthrough noise of the substrate parastics from the motional current of the micromechanical resonator.
  • Keywords
    Q-factor; atomic layer deposition; micromechanical resonators; radio transceivers; wireless channels; RF micromechanical resonators; atomic layer deposition; composite resonators; feedthrough noise; feedthrough parasitics; impedance reduction; on-chip Faraday cages; on-chip high-Q passives; transceivers; wireless communication; Frequency measurement; Impedance; Micromechanical devices; Radio frequency; Resonant frequency; Substrates; Wireless communication; ALD; Feedthrough Parasitics; Micromechanical Resonator; Motional Impedance; Quality Factor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    978-1-4244-8060-9
  • Type

    conf

  • DOI
    10.1109/SIRF.2011.5719343
  • Filename
    5719343