Title :
On band-width extension in MOS driving-point and trans-impedance stages
Author_Institution :
Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, QC, Canada
Abstract :
The cases of band-width extension in metal-oxide semiconductor (MOS) transistor driving-point and trans-impedance stages are considered. Optimization of the band-width with transistor sizing, biasing, and inductive shunt peaking are addressed. A numerical plus graphical technique is suggested for a first-hand estimation of the peaking inductor. Simulation results are presented to validate the theoretical conclusions.
Keywords :
MOSFET; operational amplifiers; optimisation; MOS driving-point; band-width extension; first-hand estimation; graphical technique; inductive shunt peaking; metal-oxide semiconductor transistor driving-point; trans-impedance stages; transistor sizing; CMOS integrated circuits; Capacitance; Impedance; Optical fiber amplifiers; SPICE; Shunt (electrical); Transistors;
Conference_Titel :
NEWCAS Conference (NEWCAS), 2010 8th IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-6806-5
Electronic_ISBN :
978-1-4244-6804-1
DOI :
10.1109/NEWCAS.2010.5603789
