Title :
Effect of Ambient on Breakdown of Silicon P-N Junctions
Author :
Carroll, John F.
Author_Institution :
Rome Air Development Center, Griffiss Air Force Base, New York
Keywords :
Breakdown voltage; Conductivity; Electric breakdown; Force control; Low voltage; P-n junctions; Process control; Silicon; Surface resistance; Testing;
Conference_Titel :
Physics of Failure in Electronics, 1965. Fourth Annual Symposium on the
Conference_Location :
Chicago, IL, USA
DOI :
10.1109/IRPS.1965.362329
