GaN HEMT large-signal model research

Author

Dan, Liu ; Liang, Wang ; Xiaojuan, Chen

Author_Institution

Inst. of Microelectron., Beijing, China

fYear

2012

fDate

19-20 April 2012

Firstpage

1

Lastpage

5

Abstract

This paper gives an AlGaN/GaN HEMT large-signal model for large-scaled device. It´s the first time to add sub-threshold current based on [1], and introduces self-heating effect under high Vds large Ids in the device. AlGaN/GaN HEMT semi-empirical DC model is optimized. I-V curves are fitted well. An AlGaN/GaN HEMT large-signal model is developed. A comparison of simulation results with experiments data is made, and good agreements of (output power) and Gain at the bias of Vgs = -2V, Vds = -25V have been obtained at operational frequency of 5.4 GHz. Accurate model is offered for GaN HEMTs MIC and MMIC design, and it enhanced the practicability of GaN HEMTs´ large-signal model.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; AlGaN-GaN; AlGaN/GaN HEMT large-signal model; large-scaled device; self-heating effect; semiempirical DC model; subthreshold current; Aluminum gallium nitride; Current measurement; Gallium nitride; HEMTs; Integrated circuit modeling; Logic gates; Semiconductor device measurement; AlGaN/GaN HEMT; large-signal model; self-heating effect power modeling; sub threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2012 International Workshop on

Conference_Location

Chengdu

Print_ISBN

978-1-4673-1893-8

Type

conf

DOI

10.1109/MMWCST.2012.6238194

Filename

6238194