DocumentCode
2599685
Title
The Effect of Phosphorus Diffusion in Thermal Oxides on the Elevated Temperature Stability of MOS Structures
Author
Carlson, H.G. ; Brown, G.A. ; Fuller, C.R. ; Osborne, J.
Author_Institution
Texas Instruments Incorporated, 13500 North Central Expressway, Dallas, Texas
fYear
1965
fDate
Nov. 1965
Firstpage
390
Lastpage
407
Keywords
Activation analysis; Atomic measurements; Capacitors; Chemicals; Instruments; Nitrogen; Pollution measurement; Silicon; Temperature; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics of Failure in Electronics, 1965. Fourth Annual Symposium on the
Conference_Location
Chicago, IL, USA
ISSN
0097-2088
Type
conf
DOI
10.1109/IRPS.1965.362335
Filename
4207692
Link To Document