Modelling and simulation of single and double gate thin film SOI MOSFETs

Summary form only given. Analytical models for thin-film SOI transistors controlled by one (conventional operation) or two gates (volume-inversion type) are proposed. They provide the electrical characteristics of the transistors in ohmic operation, in particular, the weak inversion slope and the threshold voltage. These models are based on the following approximations: for the single-gate operation (classical MOSFET) the potential varies linearly in the silicon film; for the double-gate operation (VI-MOSFET, for which both front and back gates are biased simultaneously), the potential is nearly constant. The numerical simulation (ISIS 1 program for SOI devices) is compared with these analytical modelings, and justifies these approximations for transistors fabricated on sufficiently thin film. OSIRIS II and ISIS II, a coupled process and device simulator are presented for SIMOX structures