650-GHz Resonant-Tunneling-Diode VCO With Wide Tuning Range Using Varactor Diode

Author

Kitagawa, S. ; Suzuki, Satoshi ; Asada, Minoru

Author_Institution

Interdiscipl. Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Tokyo, Japan

Volume

35

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

1215

Lastpage

1217

Abstract

We fabricated a wide-range varactor-tuned terahertz oscillator using a resonant tunneling diode (RTD). An AlAs/InGaAs double-barrier RTD and a varactor-diode mesa were integrated into a 20-μm-long slot antenna. A wide tuning range of ~11% (70 GHz) of the center frequency of 655 GHz was achieved by changing the depletion-layer capacitance of the varactor diode with a dc sweep from -4 to 0.5 V. The dependence of the output power on the varactor-diode bias was also measured. These experimental results agreed well with theory.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; millimetre wave diodes; resonant tunnelling diodes; slot antennas; submillimetre wave diodes; varactors; voltage-controlled oscillators; AlAs-InGaAs; AlAs-InGaAs double-barrier RTD; depletion layer capacitance; frequency 650 GHz; frequency 655 GHz; frequency 70 GHz; resonant tunneling diode VCO; size 20 mum; slot antenna; varactor diode bias; varactor diode mesa; wide-range varactor-tuned terahertz oscillator; Resonant tunneling devices; Submillimeter wave integrated circuits; Tuning; Varactors; Voltage-controlled oscillators; Resonant tunneling devices; resonant tunneling devices,; submillimeter wave integrated circuits; varactor; varactors; voltage-controlled oscillators;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2364826

Filename

6945801