The effects of strain and crystallographic orientation on nonlinearities in quantum well devices

Author

Smirl, Arthur L. ; Towe, Elias

Author_Institution

Lab. for Photonics & Quantum Electron., Iowa Univ., Iowa City, IA, USA

Volume

2

fYear

1996

fDate

18-21 Nov 1996

Firstpage

386

Abstract

The author discusses their progress in investigating the influences of crystallographic orientation and of strain on the nonlinear and electro-optical properties of III-V semiconductor compounds, and they present examples of how these orientation-dependent properties can be used to design novel optical devices

Keywords

III-V semiconductors; crystal orientation; electro-optical devices; epitaxial growth; molecular beam epitaxial growth; optical fabrication; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; III-V semiconductor compounds; crystallographic orientation; electro-optical properties; nonlinear optical properties; nonlinearities; optical devices; orientation-dependent properties; quantum well devices; strain effect; Anisotropic magnetoresistance; Capacitive sensors; Crystallography; Geometrical optics; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical modulation; Optical polarization; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571951

Filename

571951