Optical properties and nonlinear effects in strain engineered semiconductor heterostructures

Author

Dutta, M. ; Shen, H.

Author_Institution

Phys. Sci. Directorate, US Army Res. Lab., Adelphi, MD, USA

Volume

2

fYear

1996

fDate

18-21 Nov 1996

Firstpage

388

Abstract

Discusses several novel kinds of strained structures: 1) anisotropically strained quantum well structures; 2) variable strain quantum well structures; 3) delta strained quantum well structures, concentrating mainly on the first one. These novel structures exhibit new electronic and optical properties not seen in the conventional strained materials; thus they offer new functionalities

Keywords

electro-optical devices; electro-optical effects; nonlinear optics; photoluminescence; semiconductor heterojunctions; semiconductor quantum wells; anisotropically strained quantum well structures; delta strained quantum well structures; electronic properties; functionalities; nonlinear effects; optical properties; strain engineered semiconductor heterostructures; strained materials; strained structures; variable strain quantum well structure; Anisotropic magnetoresistance; Capacitive sensors; Geometrical optics; Nonlinear optics; Optical films; Optical mixing; Optical polarization; Optical scattering; Strain measurement; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571952

Filename

571952