DocumentCode
2600476
Title
A Plague-Free Aluminum-Gold System on Silicon Integrated Circuits
Author
Schuster, M.A. ; Lytle, W.J.
Author_Institution
Westinghouse Defense and Space Center, Aerospace Division, Baltimore, Maryland
fYear
1966
fDate
Nov. 1966
Firstpage
506
Lastpage
518
Abstract
A stable and reliable aluminum-gold system for inter-connections, contact pads, and bonded lead wires for silicon integrated circuits has been studied. The system is completely consistent with the fabrication technology, packaging, storage, and operational requirements of standard integrated circuits. It is based on an isolation of the aluminum interconnection metal from the gold contact metal by the bulk substrate material. The interconnections are vapor deposited aluminum, contact pads are gold vapor deposited on a chromium wetting agent, and the bonded lead wires are gold. The interconnections are separated from the contact pads by a barrier domain of bulk silicon substrate material which has been degenerately doped. The system is not subject to degradation due to the intermetallic formation which is common in conventional aluminum-gold systems. The electrical, mechanical, and metallurgical properties of this system are superior to those of the standard expanded contact configuration except for a 1.25 ohmincrease in resistance which arises from the diffused conduction tunnel.
Keywords
Aluminum; Bonding; Contacts; Fabrication; Gold; Integrated circuit interconnections; Integrated circuit reliability; Integrated circuit technology; Silicon; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics of Failure in Electronics, 1966. Fifth Annual Symposium on the
Conference_Location
Columbus, OH, USA
ISSN
0097-2088
Type
conf
DOI
10.1109/IRPS.1966.362382
Filename
4207742
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