Title :
A 19-ppm/°C Bandgap Voltage Reference Source
Author :
Lu, Shi-Bin ; Meng, Ying
Author_Institution :
Dept. of Phys. & Electron. Eng., Hefei Normal Univ., Hefei, China
Abstract :
In this paper, a high-precision and low temperature coefficient CMOS band gap voltage reference source is presented. Prototype of the circuit is simulated using charted 0.35-μm CMOS process. The power supply is 2.5 V. The output voltage reference exhibits 915.4±0.15 mV variation when the supply changes from 2.0 V to 3.0 V at room temperature. The power dissipation is less than 0.2 mW at 2.5 V supply voltage. The simulated results of this circuit using Eldo of Mentor Graphics Corporation show that the temperature coefficient is about 19-ppm/°C.
Keywords :
CMOS integrated circuits; circuit simulation; reference circuits; CMOS process; bandgap voltage reference source; circuit simulation; power dissipation; size 0.35 mum; voltage 2.0 V to 3.0 V; Circuit simulation; Computer networks; Diodes; Operational amplifiers; Photonic band gap; Physics computing; Power dissipation; Temperature sensors; Voltage; Wireless communication; CMOS; bandgap reference; temperature coefficient; voltage source;
Conference_Titel :
Networks Security Wireless Communications and Trusted Computing (NSWCTC), 2010 Second International Conference on
Conference_Location :
Wuhan, Hubei
Print_ISBN :
978-0-7695-4011-5
Electronic_ISBN :
978-1-4244-6598-9
DOI :
10.1109/NSWCTC.2010.101
