Title :
Creation of Interface States by Avalanche Effect
Author :
Nicollian, E.H. ; Goetzberger, A.
Author_Institution :
Bell Telephone Laboratories, Incorporated, Murray Hill, New Jersey
Abstract :
Charge and interface states are introduced into the oxide in an MOS capacitor by producing avalanche break-down at the semiconductor surface. Both the charge trapped in the oxide and the interface states can be annealed out at low temperatures.
Keywords :
Avalanche breakdown; Breakdown voltage; Capacitance-voltage characteristics; Density measurement; Interface states; Laboratories; MOS capacitors; Silicon; Surface treatment; Telephony;
Conference_Titel :
Reliability Physics Symposium, 1967. Sixth Annual
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/IRPS.1967.362395
