Critical Remarks on the Use of Streoscan Electron Microscopes for the Investigation of the Electrical Parameters of Semiconductor Surfaces

Slices provided with a normal thermal oxide and a source for minority carriers, but without metallisation, were subjected to electron bombardment, similar to that normally used in the Stereoscan Electron Microscope. This produced considerable changes in the oxide charge, together with a large increase in the number of interface states. These effects should be taken into consideration when using a Stereoscan Electron Microscope for the investigation of the electrical surface parameters of planar silicon devices.