DocumentCode
2600940
Title
Direct Transmission Electron Microscope Observation of Electrotransport in Aluminum Thin Films
Author
Blech, I.A. ; Meieran, E.S.
Author_Institution
Fairchild Semiconductor, Division of Fairchild Camera and Instrument Corp., Research and Development Laboratories, Palos Alto, California 94304
fYear
1967
fDate
Nov. 1967
Firstpage
147
Lastpage
147
Abstract
The process of electrotransport in Al thin films was directly observed by transmission electron microscopy. As expected, it was seen that hole formation occured in regions where the electron flow was in the direction of increasing temperature. Hillocks and whiskers were seen to form where the electron flow was in the direction of decreasing temperature. Cine films taken of the process show the holes to grow predominately by a transverse movement of narrow fingers which ultimately coalesce and lead to a catastrophic strip burn out.
Keywords
Aluminum; Cameras; Instruments; Laboratories; Research and development; Semiconductor films; Semiconductor thin films; Temperature; Transistors; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1967. Sixth Annual
Conference_Location
Los Angeles, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1967.362407
Filename
4207770
Link To Document