• DocumentCode
    2600940
  • Title

    Direct Transmission Electron Microscope Observation of Electrotransport in Aluminum Thin Films

  • Author

    Blech, I.A. ; Meieran, E.S.

  • Author_Institution
    Fairchild Semiconductor, Division of Fairchild Camera and Instrument Corp., Research and Development Laboratories, Palos Alto, California 94304
  • fYear
    1967
  • fDate
    Nov. 1967
  • Firstpage
    147
  • Lastpage
    147
  • Abstract
    The process of electrotransport in Al thin films was directly observed by transmission electron microscopy. As expected, it was seen that hole formation occured in regions where the electron flow was in the direction of increasing temperature. Hillocks and whiskers were seen to form where the electron flow was in the direction of decreasing temperature. Cine films taken of the process show the holes to grow predominately by a transverse movement of narrow fingers which ultimately coalesce and lead to a catastrophic strip burn out.
  • Keywords
    Aluminum; Cameras; Instruments; Laboratories; Research and development; Semiconductor films; Semiconductor thin films; Temperature; Transistors; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1967. Sixth Annual
  • Conference_Location
    Los Angeles, CA, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1967.362407
  • Filename
    4207770