Title :
Degradation of Evaporated Aluminium Contacts on Silicon Planar Transistors
Author_Institution :
Associated Semiconductor Manufacturers Limited, Wembley Laboratories, Hirst Research Centre, Wembley, England.
Abstract :
At current densities of about 3 à 106 A/cm2 evaporated aluminium contacts on silicon become degraded in 1 to 3 hours at about 250°C. At low magnifications the degraded contacts appear to have blackened, but further examination shows their surfaces to have become roughened, with the appearance of discrete regions of a silicon-rich phase in the aluminium. This degradation is accompanied by irreversible increases in the room temperature sheet resistance of the contacts.
Keywords :
Aluminum; Degradation; Electrical resistance measurement; Fingers; Rough surfaces; Silicon; Surface resistance; Surface roughness; Temperature distribution; Testing;
Conference_Titel :
Reliability Physics Symposium, 1967. Sixth Annual
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/IRPS.1967.362414