DocumentCode :
2601057
Title :
Degradation of Evaporated Aluminium Contacts on Silicon Planar Transistors
Author :
Oliver, C.B.
Author_Institution :
Associated Semiconductor Manufacturers Limited, Wembley Laboratories, Hirst Research Centre, Wembley, England.
fYear :
1967
fDate :
Nov. 1967
Firstpage :
209
Lastpage :
215
Abstract :
At current densities of about 3 × 106 A/cm2 evaporated aluminium contacts on silicon become degraded in 1 to 3 hours at about 250°C. At low magnifications the degraded contacts appear to have blackened, but further examination shows their surfaces to have become roughened, with the appearance of discrete regions of a silicon-rich phase in the aluminium. This degradation is accompanied by irreversible increases in the room temperature sheet resistance of the contacts.
Keywords :
Aluminum; Degradation; Electrical resistance measurement; Fingers; Rough surfaces; Silicon; Surface resistance; Surface roughness; Temperature distribution; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1967. Sixth Annual
Conference_Location :
Los Angeles, CA, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1967.362414
Filename :
4207777
Link To Document :
بازگشت