Title :
The Effects of SiO2 Thickness Variation on the Operation of Direct-Tunneling Mode MNOS Memory Transistors
Author :
Ross, E.C. ; Goodman, A.M. ; Duffy, M.T.
Author_Institution :
RCA Laboratories, Princeton, N. J. 08540
Abstract :
The results of switching measurements on directtunneling mode MNOS (metal-nitride-oxide-silicon) memory transistors in which the thickness of the silicon dioxide layer varies from 15-27.5 Ã… are presented. The reliability of charge storage effects in these devices is discussed.
Keywords :
Charge transfer; Dielectric constant; Dielectrics and electrical insulation; Electron traps; FETs; Laboratories; Silicon compounds; Thickness measurement; Threshold voltage; Tunneling;
Conference_Titel :
Reliability Physics Symposium, 1970. 8th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1970.362427
