• DocumentCode
    2601287
  • Title

    The Effects of SiO2 Thickness Variation on the Operation of Direct-Tunneling Mode MNOS Memory Transistors

  • Author

    Ross, E.C. ; Goodman, A.M. ; Duffy, M.T.

  • Author_Institution
    RCA Laboratories, Princeton, N. J. 08540
  • fYear
    1970
  • fDate
    25659
  • Firstpage
    17
  • Lastpage
    22
  • Abstract
    The results of switching measurements on directtunneling mode MNOS (metal-nitride-oxide-silicon) memory transistors in which the thickness of the silicon dioxide layer varies from 15-27.5 Ã… are presented. The reliability of charge storage effects in these devices is discussed.
  • Keywords
    Charge transfer; Dielectric constant; Dielectrics and electrical insulation; Electron traps; FETs; Laboratories; Silicon compounds; Thickness measurement; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1970. 8th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1970.362427
  • Filename
    4207793
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2601287