• DocumentCode
    2601446
  • Title

    Degradation of GaAs and Ga1-xAlxAs Light Emitting Diodes

  • Author

    Blum, J.M. ; Konnerth, K.L. ; Marinace, J.C. ; Woodall, J.

  • Author_Institution
    IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
  • fYear
    1970
  • fDate
    25659
  • Firstpage
    54
  • Lastpage
    56
  • Abstract
    Life test data on the degradation characteristics of GaAs and GaAlAs light emitting diodes are presented. The GaAs data show the effects of diode processing and impurity concentration on degradation. The AlGaAs diodes prepared during the early stages of their development were tested at various current densities and aged up to 14,000 hours.
  • Keywords
    Aging; Degradation; Diffusion processes; Doping; Gallium arsenide; Impurities; Life testing; Light emitting diodes; Silicon; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1970. 8th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1970.362435
  • Filename
    4207801
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2601446