Title :
A Novel Via-fuse Technology Featuring Highly Stable Blow Operation with Large On-off Ratio for 32nm Node and Beyond
Author :
Takaoka, H. ; Ueda, T. ; Tsuda, H. ; Ono, A.
Author_Institution :
NEC Electron. Corp., Sagamihara
Abstract :
We have developed a novel e-fuse technology utilizing a Cu-via for the first time. Due to its unique structure and crack-assisted mechanism, void formation locations can be effectively confined to the via-metal interface, enabling highly stable operation as well as a large on-off ratio of 7 orders of magnitude. We have confirmed a sub-10 ppm initial-failure rate and a sub-20 ppm failure rate after thermal stability test equivalent to the thermal stress during the practical packaging process. We believe that this technology is indispensable for the 32 nm technology node and beyond, where metal material is commonly used as a poly-gate, rendering it unsuitable for fuse devices.
Keywords :
copper; electric fuses; failure analysis; thermal stability; thermal stresses; crack-assisted mechanism; e-fuse technology; failure rate; packaging process; size 32 nm; stable blow operation; thermal stability test; thermal stress; via-metal interface; void formation location; Cryptography; Electronic packaging thermal management; Fuses; Inorganic materials; National electric code; Security; Testing; Thermal stability; Thermal stresses; Wire;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418858
