DocumentCode
2601625
Title
Current Crowding Effects at Aluminun-Silicon Contacts
Author
Prokop, G.S. ; Ting, C.Y. ; Joseph, R.R.
Author_Institution
IBM Components Division, East Fishkill Facility, Hopewell Junption, New York 12533
fYear
1970
fDate
25659
Firstpage
121
Lastpage
126
Abstract
The magnitude of current crowding and its effects on failure mechanisms at aluminum-silicon contacts have been studied by using an enlarged contact. Current was found to decrease exponentially with distance from the leading edge of the contact. Joule heating in the contact when stressed at high currents caused diffusion of silicon into the aluminum metallization. Accelerated testing at low currents to minimize this effect resulted in diffusion barrier type failures.
Keywords
Aluminum; Contact resistance; Electromigration; Failure analysis; Heating; Life estimation; Proximity effect; Resistors; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1970. 8th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1970.362446
Filename
4207812
Link To Document