• DocumentCode
    2601625
  • Title

    Current Crowding Effects at Aluminun-Silicon Contacts

  • Author

    Prokop, G.S. ; Ting, C.Y. ; Joseph, R.R.

  • Author_Institution
    IBM Components Division, East Fishkill Facility, Hopewell Junption, New York 12533
  • fYear
    1970
  • fDate
    25659
  • Firstpage
    121
  • Lastpage
    126
  • Abstract
    The magnitude of current crowding and its effects on failure mechanisms at aluminum-silicon contacts have been studied by using an enlarged contact. Current was found to decrease exponentially with distance from the leading edge of the contact. Joule heating in the contact when stressed at high currents caused diffusion of silicon into the aluminum metallization. Accelerated testing at low currents to minimize this effect resulted in diffusion barrier type failures.
  • Keywords
    Aluminum; Contact resistance; Electromigration; Failure analysis; Heating; Life estimation; Proximity effect; Resistors; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1970. 8th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1970.362446
  • Filename
    4207812