Title :
Materials Science-based Device Performance Engineering for Metal Gate High-k CMOS
Author :
Toriumi, A. ; Kita, K. ; Tomida, K. ; Zhao, Y. ; Widiez, J. ; Nabatame, T. ; Ota, H. ; Hirose, M.
Author_Institution :
Univ. of Tokyo, Tokyo
Abstract :
Advanced CMOS engineering strongly requires materials science-based technology in addition to (rather than) demonstrating exotic non-planar device structures and/or various smart integration techniques. This paper describes typical examples of materials-related device engineering in metal gate/high-k CMOS developments, focusing on basic issues such as EOT scalability with higher-k, an inversion layer mobility degradation mechanism and the VTH tuning principle. These considerations will be key to designing high performance CMOS.
Keywords :
CMOS integrated circuits; MOSFET; dielectric materials; electron mobility; high-k dielectric thin films; semiconductor device models; tuning; CMOS design; EOT scalability; inversion layer mobility degradation mechanism; materials science-based device performance; metal gate high-k CMOS; voltage threshold tuning principle; CMOS technology; Dielectric materials; Doping; Hafnium compounds; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Permittivity; Phase change materials;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418861
