Title :
Flexible, simplified CMOS on Si(110) with metal gate / high k for HP and LSTP
Author :
Harris, H.R. ; Thompson, S.E. ; Krishnan, S. ; Kirsch, P. ; Majhi, P. ; Smith, C.E. ; Hussain, M.M. ; Sun, G. ; Adhikari, H. ; Suthram, S. ; Lee, B.H. ; Tseng, H.-H. ; Jammy, R.
Author_Institution :
Sematech, Austin
Abstract :
We examine and demonstrate the benefit of high k and metal gate on Si(110) orientation-only CMOS devices and demonstrate not only good PMOS but competitive NMOS device performance. It is shown that high k / metal gates on NMOS Si(110) surface have higher than expected performance due to velocity saturation of minority carriers. Improvement in source/drain extension results in nearly symmetric CMOS output characteristics with no stress enhancement. Examining potential circuit impact reveals that the Si(110) surface provides a significant improvement in performance for UP and LSTP without large process complexity associated with mixed orientation CMOS approaches.
Keywords :
CMOS integrated circuits; MOSFET; elemental semiconductors; high-k dielectric thin films; silicon; CMOS devices; NMOS device; PMOS device; Si; high k gate dielectric; metal gate; simplified CMOS; source-drain extension; CMOS process; CMOS technology; Costs; Degradation; Electron mobility; High K dielectric materials; High-K gate dielectrics; MOS devices; Production; Rough surfaces;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418862
