Title :
Intrinsic Origin of Electron Mobility Reduction in High-k MOSFETs - From Remote Phonon to Bottom Interface Dipole Scattering
Author :
Ota, Hiroyuki ; Hirano, Akito ; Watanabe, Yukimune ; Yasuda, Naoki ; Iwamoto, Kunihiko ; Akiyama, Koji ; Okada, Kenji ; Migita, S. ; Nabatame, Toshihide ; Toriumi, A.
Author_Institution :
AIST, Ibaraki
Abstract :
We show that the mobility degradation at low fields is predominantly due to a dipole layer intrinsically formed at the HfO2/SiO2 interface. This dipole layer is also responsible for the anomalousVFB (VTH) shift in high-k MOSFETs. Contribution of remote phonon scattering to the mobility degradation is very little, as revealed by comparing the mobility behaviors for MOSFETs with different crystal symmetry of HfO2 dielectrics.
Keywords :
MOSFET; crystal symmetry; electron mobility; hafnium compounds; high-k dielectric thin films; interface phonons; HfO2-SiO2; crystal symmetry; electron mobility reduction; high-k MOSFET; high-k dielectrics; interface dipole layer; interface dipole scattering; mobility degradation; remote phonon scattering; Annealing; Channel bank filters; Degradation; Electron mobility; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Optical scattering; Phonons;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418864
