DocumentCode :
2601848
Title :
Novel investigation of edge effects in SIMOX transistors
Author :
Elewa, T. ; Kleveland, B. ; Boukriss, B. ; Ouisse, T. ; Chovet, A. ; Cristoloveanu, S. ; Davis, J.
Author_Institution :
Lab. PCS, Grenoble, France
fYear :
1989
fDate :
3-5 Oct 1989
Firstpage :
35
Lastpage :
36
Abstract :
Results related to the edge effects in SIMOX (separation by implementation of oxygen) devices are derived using complementary electrical characterization methods. The parallel transistors activated at the sidewalls of the silicon islands can dominate the subthreshold characteristics and cause a substantial shift of the threshold voltage. This parasitic conduction can also result in high leakage currents and logic upsets. Modifications of conventional LOCOS and MESA technologies by a high doping of the sidewalls have not totally eliminated the parasitic effects and circuit fabrication methods are under investigation. As the understanding of the edge-effects is crucial for the improvement of the technology, static ID(VG), charge pumping and noise measurements are combined to extract new information
Keywords :
current fluctuations; electron device noise; insulated gate field effect transistors; random noise; semiconductor device testing; semiconductor-insulator boundaries; LOCOS; MESA technologies; SIMOX transistors; Si islands; Si:O; channel current fluctuations; charge pumping; edge effects; electrical characterization methods; gate voltage; leakage currents; logic upsets; noise measurements; parasitic conduction; sidewalls; static drain current; subthreshold characteristics; threshold voltage; Charge pumps; Circuits; Data mining; Doping; Fabrication; Leakage current; Logic devices; Noise measurement; Silicon; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location :
Stateline, NV
Type :
conf
DOI :
10.1109/SOI.1989.69753
Filename :
69753
Link To Document :
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