• DocumentCode
    2602115
  • Title

    Interface Films in the Si-Al System

  • Author

    Lawrence, J.E. ; Khidr, M.S.

  • Author_Institution
    Fairchild Semiconductor, 464 Ellis Street, Mountain View, California
  • fYear
    1970
  • fDate
    25659
  • Firstpage
    285
  • Lastpage
    287
  • Abstract
    Carbon-like interface films exert both a metallurigical and electrical effect on Semiconductor products. Test devices without contamination have uniform silicon to aluminum diffusion, Rc approximately 3 × 10¿7 ohms cm2, and Vbe(sat) = 0. 84 v. Similar devices with massive interface films have restricted silicon to aluminum diffusion, Rc greater than 10¿6 devices recover during operation.
  • Keywords
    Aluminum; Chemicals; Circuit testing; Integrated circuit testing; Petroleum; Pollution measurement; Semiconductor films; Semiconductor thin films; Silicon; Thin film devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1970. 8th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1970.362472
  • Filename
    4207838
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2602115